Curriculum Vitae

Songphol Kanjanachuchai ทรงพล กาญจนชูชัย

PhD (Cantab), MEng (Hons), ACGI, SMIEEE

Current Position:

Semiconductor Device Research Laboratory Department of Electrical Engineering Faculty of Engineering Chulalongkorn University Phyathai Road, Bangkok 10330 Thailand Tel: +66-(0)-2218-6524 Fax: +66-(0)-2218-6523 E-mail: songphol.k@chula.ac.th Orcid ID: 0000-0003-4622-4176 Scopus ID: 6602637472

1999-2001: Lecturer 2001-2004: Assistant Professor 2004-2016: Associate Professor 2017-present: Professor

Past & Present:

• 1999-present: Chulalongkorn University, Bangkok, Thailand
• 2008-2010: Visiting Research Fellow, University of New South Wales, Australia
• 2007-2008: Director of Nano-Engineering Program, International School of Engineering
• April – May 2003: Visiting Research Scientist at Tokyo Institute of Technology (Research Center for Quantum Effect Electronics), Tokyo, Japan
• 1995-1999 Doctor of Philosophy in Physics from University of Cambridge (Cavendish Laboratory, Microelectronics Group), UK. Thesis Title: Single-electron charging in bandgap-engineered silicon nanostructures
• 1991-1995 Master of Engineering (First Class Honours) in Electrical and Electronic Engineering, Imperial College of Science, Technology and Medicine, University of London, UK. Thesis Title: Silicon-Silicon Germanium Modulation Doped Field-Effect Transistors
• 1990-1991 A-levels in Mathematics, Applied Mathematics and Physics (distinction) from Rochester Independent College, Kent, UK.

Equipment:

The list includes hardware and software installed at our laboratory or (*) available through collaboration/services elsewhere. For detail of my research insterests, see research page.

• Material growth. Molecular beam epitaxy (MBE: Riber 32P)
• Device fabrication. Lithography (photo-, e-beam*), RIE*, metallization
• Structural characterization. AFM: Seiko SPA400, SEM*, TEM*, XRD*
• Optical characterization. Excitation: Spectra Physics Ar+ laser Stabilite 2017; l Dispersion: Spex 1000, iHR320; LIA: Ametek’s Signal Recovery 7225; Hamamatsu Detectors: InGaAs (G7754-01), GaAs PMT (R636-10); OSA: ; Power meter: InGaAs (Ando AQ2733 for 750-1800 nm), Si ( for )
• Cryogenics (for low-temperature PL & IV measurements). APD DE-202, LakeShore 330
• Electrical characterization. Source-Measure Unit (SMU): HP4140, HP4142, Advantest’s TR6143; LCR: HP4274A; Hall (VdP)
• Theoretical modelling & integration of measurement systems (C, LabView)
• Miscellaneous. Multimeter: Agilent 34401A, CROs: , Pulse generators: .

Publication:

(last updated 29-Feb-2024)

2024

· C. Himwas, V. Yordsri, C. Thanachayanont, S. Chomdech, W. Pumee, S. Panyakeow, S. Kanjanachuchai, High verticality vapor–liquid–solid growth of GaAs_0.99Bi_0.01 nanowires using Ga–Bi assisted catalytic droplets, Nanoscale Advances, 6, 846-854 (2024). doi

2023

· S. Kanjanachuchai, T. Wongpinij, P. Photongkam, C. Euaruksakul, UV-Induced Negative Growth of In Nanodroplets and Mounds from Ultrathin In Layers on Sublimated InP(110), Crystal Growth & Design, 23, 7207-7216 (2023). doi

· C. Himwas, T. Wongpinij, S. Kijamnajsuk, C. Euaruksakul, P. Photongkam, M. Tchernycheva, W. Pumee, S. Panyakeow, S. Kanjanachuchai, Degradation mechanisms of annealed GaAsPBi films grown by molecular beam epitaxy, Surfaces and Interfaces, 40, 103031 (2023). doi

· Zon, S. Thainoi, S. Kiravittaya, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Growth evolution and polarization-dependent photoluminescence of lateral InSb/CdTe nanowires, Journal of Crystal Growth, 621, 127366 (2023). doi

2022

· C. Himwas, V. Yordsri, C. Thanachayanont, M. Tchernycheva, S. Panyakeow, S. Kanjanachuchai, GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy, Nanotechnology, 33, 095602 (2022). doi

· Zon, S. Thainoi, S. Kiravittaya, N. Nuntawong, S. Sopitpan, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Direct growth of InSb nanowires on CdTe (001) substrates by molecular beam epitaxy, Materials Science and Engineering: B, 285, 115958 (2022). doi

2021

· S. Kanjanachuchai, T. Wongpinij, C. Euaruksakul, P. Photongkam, In situ observation and control of ultrathin In layers on sublimated InP(100) surfaces, Applied Surface Science, 542, 148549 (2021). (Issue’s Front Cover, hi-res) doi

· C. Himwas, S. Kijamnajsuk, V. Yordsri, C. Thanachayanont, T. Wongpinij, C. Euaruksakul, S. Panyakeow, S. Kanjanachuchai, Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001), Semiconductor Science and Technology, 36, 045014 (2021). doi

· Zon, T. Korkerdsantisuk, A. Sangpho, S. Thainoi, U. Prasatsap, S. Kiravittaya, N. Thornyanadacha, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Investigation of hybrid InSb and GaSb quantum nanostructures, Microelectronic Engineering, 237, 111494 (2021). doi

· Zon, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates, Materials Science and Engineering: B, 271, 115309 (2021). doi

2020

· C. Himwas, A. Soison, S. Kijamnajsuk, T. Wongpinij, C. Euaraksakul, S. Panyakeow, S. Kanjanachuchai, GaAsPBi epitaxial layer grown by molecular beam epitaxy, Semiconductor Science and Technology, 35, 095009 (2020). doi

· M. Chikumpa, Zon, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Raman peak shifts by applied magnetic field in InSb/Al_xIn_1−xSb superlattices, Materials Research Express, 7, 105007 (2020). doi

· K. Rongrueangkul, P. Srisinsuphya, S. Thainoi, S. Kiravittaya, N. Nuntawong, N. Thornyanadacha, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, A. Tandaechanurat, S. Panyakeow, Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy, Physica Status Solidi (b), 257, 1900374 (2020). doi

2019

· S. Kanjanachuchai, T. Wongpinij, C. Euaruksakul, and P. Photongkam, "Au-catalyzed desorption of GaAs oxides," Nanotechnology 30, 215703 (2019). doi, supplementary data

· S. Posri, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan and S. Panyakeow, "Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy," Physica Status Solidi (a) 216, 1800498 (2019). doi

· Zon, P. Phienlumlert, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Y. Ota, S. Iwamoto and Y. Arakawa, "Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy," Physica Status Solidi (a) 216, 1800499 (2019). (Issue’s Front Cover, hi-res) doi

· Zon, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, Y. Ota, S. Iwamoto, Y. Arakawa, Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates, Journal of Applied Physics, 126, 084301 (2019). doi

· Zon, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan and S. Panyakeow, "Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (001) Ge substrate," Journal of Crystal Growth 512, 136 (2019). doi

· C. Chevuntulak, T. Rakpaises, N. Sridumrongsak, S. Thainoi, S. Kiravittaya, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, A. Tandaechanurat and S. Panyakeow, "Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells," Journal of Crystal Growth 512, 159 (2019). doi

· P. Lekwongderm, R. Chumkaew, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan and S. Panyakeow, "Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field," Journal of Crystal Growth 512, 198 (2019). doi

· P. Srisinsuphya, K. Rongrueangkul, R. Khanchaitham, S. Thainoi, S. Kiravittaya, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, A. Tandaechanurat, S. Panyakeow, InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength, Journal of Crystal Growth, 514, 36-39 (2019). doi

2018

· S. Kanjanachuchai, T. Wongpinij, S. Kijamnajsuk, C. Himwas, S. Panyakeow, P. Photongkam, “Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations”, Journal of Applied Physics 123, 161570 (2018). doi

· P. Narabadeesuphakorn, S. Thainoi, A. Tandaechanurat, S. Kiravittaya, N. Nuntawong, S. Sopitopan, et al., "Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties," Journal of Crystal Growth 487, 40 (2018). doi

2017

· S. Kanjanachuchai and P. Photongkam, “Planar Self-Assembly of Submicron and Nanoscale Wires and Grooves on III–V(110) Surfaces”, Crystal Growth & Design 17, 4413-4421 (2017). (Issue’s Front Cover, hi-res, ok-res) doi

· S. Thainoi, S. Kiravittaya, T. Poempool, Zon, S. Sopitpan, S. Kanjanachuchai, S. Ratanathamaphan, S. Panyakeow, “Growth of truncated pyramidal InSb nanostructures on GaAs substrate”, Journal of Crystal Growth 468, 737-739 (2017). doi

· Zon, T. Poempool, S. Kiravittaya, S. Sopitpan, S. Thainoi, S. Kanjanachuchai, S. Ratanathamaphan, S. Panyakeow, “Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate”, Journal of Crystal Growth 468, 541-546 (2017). doi

· S. Thainoi, S. Kiravittaya, T. Poempool, Zon, N. Nuntawong, S. Sopitpan, S. Kanjanachuchai, S. Ratanathamaphan, S. Panyakeow, "Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures," Journal of Crystal Growth 477, 30-33 (2017). doi

· P. Narabadeesuphakorn, J. Supasil, S. Thainoi, A. Tandaechanurat, S. Kiravittaya, N. Nuntawong, et al., "Growth Control of Twin InSb/GaAs Nano-Stripes by Molecular Beam Epitaxy," MRS Advances 2, 2943 (2017). doi

2016

· W. Eiwwongcharoen, N. Nakareseisoon, S. Thainoi, S. Panyakeow, S. Kanjanachuchai, "Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields," CrystEngComm 18, 5852 (2016). doi

· Zon, T. Poempool, S. Kiravittaya, N. Nuntawong, S. Sopitpan, S. Thainoi, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, "Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate," Electronic Materials Letters 12, 517 (2016). doi

· Zon, T. Poempool, S. Kiravittaya, S. Sopitpan, S. Thainoi, S. Kanjanachuchai, et al., "Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains," MRS Advances 1, 1729 (2016). doi

· T. Poempool, Zon, S. Kiravittaya, S. Sopitpan, S. Thainoi, S. Kanjanachuchai, et al., "GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties," MRS Advances 1, 1677 (2015). doi

2015

· B. A. Trisna, N. Nakareseisoon, W. Eiwwongcharoen, S. Panyakeow, S. Kanjanachuchai, "Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns," Nanoscale Research Letters 10, 184 (2015) doi

· S. Kanjanachuchai, M. Xu, A. Jaffré, A. Jittrong, T. Chokamnuai, S. Panyakeow, M. Boutchich, "Excitation transfer in stacked quantum dot chains," Semiconductor Science and Technology 30, 055005 (2015). doi

· S. Kanjanachuchai and P. Photongkam, "Dislocation-Guided Self-Running Droplets," Crystal Growth & Design 15, 14-19 (2015). doi

2014

· S. Kanjanachuchai and C. Euaruksakul, "Directions and Breakup of Self-Running In Droplets on Low-Index InP Surfaces," Crystal Growth & Design 14, 830-834 (2014). (Issue’s Front Cover, hi-res, ok-res) doi

· S. Kanjanachuchai, N. Patanasemakul, N. Thongkamkoon, N. Thudsalingkarnsakul, N. Siripitakchai, P. Changmoang, S. Thainoi, S. Panyakeow, "Optical Properties of Lateral InGaAs Quantum Dot Molecules Single- and Bi-Layers," in Quantum Dot Molecules. vol. 14, J. Wu and Z. M. Wang, Eds., ed: Springer New York, 2014, pp. 51-75. (Book Chapter) doi

2013

· S. Kanjanachuchai and C. Euaruksakul, "Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces," ACS Applied Materials & Interfaces 5, 7709-7713 (2013). doi

· T. Chokamnuai, P. Rattanadon, S. Thainoi, S. Panyakeow, S. Kanjanachuchai, "Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns," Journal of Crystal Growth 378, 524-528 (2013). doi

· T. Limwongse, S. Thainoi, S. Panyakeow, S. Kanjanachuchai, "InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium," Journal of Nanomaterials 2013, 791782 (2013). doi

2012

· N. Patanasemakul, S. Panyakeow, S. Kanjanachuchai, "Chirped InGaAs quantum dot molecules for broadband applications," Nanoscale Research Letters 7, 207 (2012). doi

2011

· S. Kanjanachuchai and T. Limwongse, "Nucleation Sequence of InAs Quantum Dots on Cross-Hatch Patterns," Journal of Nanoscience and Nanotechnology 11, 10787-10791 (2011). doi

· C. Himwas, S. Panyakeow, S. Kanjanachuchai, "Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns," Nanoscale Research Letters 6, 496 (2011). doi

· W. Tantiweerasophon, S. Thainoi, P. Changmuang, S. Kanjanachuchai, S. Rattanathammaphan, S. Panyakeow, "Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates," Journal of Crystal Growth 323, 254 (2011). doi

· N. Thongkamkoon, N. Patanasemakul, N. Siripitakchai, S. Thainoi, S. Panyakeow, S. Kanjanachuchai, "Bimodal optical characteristics of lateral InGaAs quantum dot molecules," Journal of Crystal Growth 323, 206 (2011). doi

2010

· S. Kanjanachuchai, N. Thudsalingkarnsakul, N. Siripitakchai, P. Changmoang, S. Thainoi, S. Panyakeow, "Temperature-dependent photoluminescent characteristics of lateral InGaAs quantum dot molecules", Microelectronic Engineering 87(5-8), 1352-1356 (2010). doi

· O. Tangmettajittakul, S. Thainoi, P. Changmoang, S. Kanjanachuchai, S. Rattanathammaphan, S. Panyakeow, "Extended optical properties beyond band-edge of GaAs by InAs quantum dots and quantum dot molecules", Microelectronic Engineering 87(5-8), 1304-1307 (2010). doi

2009

· K. Laouthaiwattana, O. Tangmattajittakul, S. Suraprapapich, S. Thainoi, P. Changmuang, S. Kanjanachuchai, S. Ratanathamaphan, S. Panyakeow, “Optimization of stacking high-density quantum dot molecules for photovoltaic effect,” Solar Energy Materials and Solar Cells 93 (6-7), 746-749 (2009). doi

· S. Kanjanachuchai, M. Maitreeboriraks, C. C. Thet, T. Limwongse, S. Panyakeow, “Self-assembled InAs quantum dots on cross-hatch InGaAs templates: Excess growth, growth rate, capping and preferential alignment,” Microelectronic Engineering 86(4-6), 844-849 (2009). doi

2008

· N. Chit Swe, O. Tangmattajittakul, S. Suraprapapich, P. Changmoang, S. Thainoi, C. Wissawinthanon, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow, “Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAs/GaAs quantum well structures by molecular beam epitaxy”, Journal of Vacuum Science & Technology B 26(3), 1100-1104 (2008). doi

· N. Thudsalingkarnsakul, T. Limwongse, N. Siripitakchai, S. Panyakeow, S. Kanjanachuchai, “Effective One-Dimensional Electronic Structure of InGaAs Quantum Dot Molecules”, Microelectronic Engineering 85(5-6), 1225-1228 (2008). doi

· N. Siripitakchai, C.C. Thet, S. Panyakeow, S. Kanjanachuchai, “Aligned quantum dot molecules with 4 satellite dots by self-assembly”, Microelectronic Engineering 85(5-6), 1218-1221 (2008). doi

· C.C. Thet, S. Sanorpim, S. Panyakeow, S. Kanjanachuchai, “The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots”, Semiconductor Science and Technology 23(5), 055007 (2008). doi

2007

· C.C. Thet, S. Panyakeow, S. Kanjanachuchai, “Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates”, Microelectronic Engineering 84(5-8), 1562–1565 (2007). doi

· N. Siripitakchai, S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, “Evolution of self-assembled lateral quantum dot molecules”, J. of Crystal Growth 301-302, 812-816 (2007). doi

2006

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, “Quantum dot integration in heterostructure solar cells”, Solar Energy Materials and Solar Cells 90(18-19), 2968-2974 (2006). doi

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, “Thin-capping-and-regrowth molecular beam epitaxial technique for quantum dots and quantum-dot molecules”, Journal of Vacuum Science & Technology B 24(3), 1665-1667 (2006). doi

· S. Suraprapapich, S. Kanjanachuchai, S. Thainoi, S. Panyakeow, “Self-assembled lateral InAs quantum dot molecules: Dot ensemble control and polarization-dependent photoluminescence”, Microelectronic Engineering 83(4-9), 1526-1529 (2006). doi

· S. Suraprapapich, S. Kanjanachuchai, S. Thainoi, S. Panyakeow, “Regrowth of self-assembled InAs quantum dots on nanohole and stripe templates”, J. Microlith., Microfab., Microsyst. 5(1), 011008 (2006). doi

2005

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, “Self-assembled quantum-dot molecules by molecular-beam epitaxy”, Journal of Vacuum Science & Technology B 23(3), 1217-1220 (2005). doi

· S. Suraprapapich, S. Kanjanachuchai, S. Thainoi, S. Panyakeow, “Ordered quantum dots formation on engineered template by molecular beam epitaxy”, Microelectronic Engineering 78-79, 349-352 (2005). doi

2004

· S. Kanjanachuchai, Y. Tsuchiya, K. Usami, S. Oda, “Nanocrystalline silicon dots displacement using speed-controlled tapping-mode atomic force microscopy”, Microelectronic Engineering 73-74, 615-619 (2004). doi

2001 & earlier

· S. Kanjanachuchai, T. J. Thornton, J. M. Fernandez, H. Ahmed, “Coulomb blockade in strained-Si nanowires on leaky virtual substrates”, Semiconductor Science and Technology 16(2), 72-76 (2001). doi

· S. Kanjanachuchai, J. M. Bonar, H. Ahmed, “Single charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator”, Semiconductor Science and Technology 14(12), 1065-1068 (1999). doi

· S. Kanjanachuchai, J. M. Bonar, G. J. Parker, H. Ahmed, “Single hole tunnelling in SiGe nanostructures”, Microelectronic Engineering 46(1-4), 137-140 (1999). doi

· S. Kanjanachuchai, T. J. Thornton, J. M. Fernandez, H. Ahmed, “Leakage currents in Si_1-xGe_x virtual substrates: measurements and device applications”, Semiconductor Science and Technology 13(10), 1215-1218 (1998). doi

· R. S. Prasad, T. J. Thornton, S. Kanjanachuchai, J. Fernandez, A. Matsumura, “Mobility degradation in gated Si-SiGe quantum-wells with thermally grown oxides”, Electronics Letters 31(21), 1876-1878 (1995). doi

Non-ISI Publication

· T. Limwongse, S. Panyakeow, S. Kanjanachuchai, "Evolution of InAs quantum dots grown on cross-hatch substrates," physica status solidi (c) 6 (4), 806-809 (2009). doi

· S. Suraprapapich, S. Thainoi, C. Laliew, S. Kanjanachuchai, S. Panyakeow, “Self-Assembled Indium-Arsenide Elongated Nanostructure Grown by Molecular Beam Epitaxy”, International Journal of Nanoscience 4(2), 1-7 (2005). doi

Conference Presentations

· S. Kanjanachuchai, J. M. Bonar, G. J. Parker, and H. Ahmed, “Single hole tunnelling in side-gated SiGe quantum dots”, Extended abstracts of the 1998 International Conference on Solid State Devices and Materials, 7-10 September 1998, Hiroshima, Japan, p 184.

· S. Kanjanachuchai, H. Ahmed, and G. J. Parker, “Coulomb blockade in a silicon-germanium nanowire”, presented at the International Conference Micro- and Nano-Engineering 98, 22-24 September 1998, Leuven, Belgium

· S. Kanjanachuchai, J. M. Bonar, and H. Ahmed, “Silicon germanium-based quantum dot transistors”, Proceedings of The First NRCT-KOSEF Joint Seminar on Semiconductors, 30 November – 1 December 1999, Bangkok, Thailand.

· S. Kiravittaya, R. Songmuang, S. Sopitpan, S. Kanjanachuchai, S. Ratanathammapan, M. Sawadsaringkarn, and S. Panyakeow, "Self-assembled composite quantum dots for photovoltaic applications", Presented at the 28^th IEEE Photovoltaic Specialists Conference, 15-22 September 2000, Alaska, USA.

· R. Songmuang, S. Thainoi, S. Kanjanachuchai, M. Sawadsaringkarn, and S. Panyakeow, "Photovoltaic effects in composite quantum dot structures", Presented at the 17th European Photovoltaic Solar Energy Conference, 22-26 October 2001, Munich, Germany.

· S. Kamprachum, S. Kiravittaya, R. Songmuang, S. Thainoi, S. Kanjanachuchai, M. Sawadsaringkarn, and S. Panyakeow, "Multi-stacked quantum dots with graded dot sizes for photovoltaic applications", Presented at the 29^th IEEE Photovoltaic Specialists Conference, 21-24 May 2002, Louisiana, USA.

· S. Kanjanachuchai and S. Panyakeow, "Beyond CMOS: single-electron transistors ", Presented at the 2002 IEEE International Conference on Industrial Technology , 11-14 December 2002, Bangkok, Thailand

· S. Kamprachum, S. Thainoi, S. Kanjanachuchai, M. Sawadsaringkarn, and S. Panyakeow, "Multi-stacked InAs/GaAs quantum dot structure and their photovoltaic characteristics", Presented at the 3rd World Conference on Photovoltaic Energy Conversion, 11-18 May 2003, Osaka, Japan.

· S. Kanjanachuchai, Y. Tsuchiya, K. Usami and S. Oda, "Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy", presented at the International Conference Micro- and Nano-Engineering 2003, 22-25 September 2003, Cambridge, England

· D. Kruangam, S. Kanjanachuchai, S. Ratanakuakangwan, K. Wattanavichiean, V. Boon-amnuay-vittaya, P. Sichanugrist, P. Siamchai and C. Trachu, "Pre-feasibility study on solar cell production in Thailand", Technical Digest of the International PVSEC-14, p 465.

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai and S. Panyakeow, "Quantum dot integration in heterostructure solar cells", Technical Digest of the International PVSEC-14, p 509.

· S. Kanjanachuchai, Y. Tsuchiya, K. Usami and S. Oda, "Manipulation of nanocrystalline silicon dots by wet etching", presented at the 2nd KOSEF-NRCT Electronic Materials and Device Processing Workshop, 12-15 Jan 2004, Dae-jeon, Korea.

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai and S. Panyakeow, “Quantum Dot Molecules for Photovoltaic Cell Application”, 31st IEEE Photovoltaic Specialists Conference, 3-7 January 2005, Florida, USA.

· S. Suraprapapich, S. Ruangdet, T. Panyawanichkul, S. Thainoi, S. Kanjanachuchai and S. Panyakeow, “Multi-Stacked Lateral Quantum Dot Molecules for Photovoltaic Applications”, 20th European Photovoltaic Solar Energy Conference and Exhibition, 6-10 June 2005, Barcelona, Spain.

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai and S. Panyakeow, “Self-Assembled InAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique”, China NANO 2005, 9-11 June 2005, Beijing, China.

· S. Suraprapapich, S. Ruangdet, S. Thainoi, S. Kanjanachuchai and S. Panyakeow, “Multi-Stacked High Density Quantum Dot Molecules as PV Active Layer”, 15th International Photovoltaic Science and Engineering Conference (PVSEC-15), 10-15 October 2005, Shanghai, China.

· S. Suraprapapich, S. Thainoi, S. Kanjanachuchai and S. Panyakeow, “Thin-Capping-and-Regrowth MBE Technique for Quantum Dots and Quantum Dot Molecules”, 23rd North America Molecular Beam Epitaxy (NAMBE-2005), 11-14 September 2005, California, USA.

· S. Ruangdet, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, "Improvement of PV Performance by Using Multi-Stacked High Density InAs Quantum Dot Molecules", IEEE 4th World Conference on Photovoltaic Energy Conversion, May 2006, 225 - 228.

· C. C. Thet, S. Kanjanachuchai, S. Panyakeow, "The Effects of Substrate Mounds and Pits on the Periodicity of Cross-Hatch Surface and Subsequent Formation of Quantum Dots", 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), 2007, 1141 - 1144.

· K. Yanggratoke, S. Kanjanachuchai, "Hybrid Quantum Cellular Automata memory", 5th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2008, 857 - 860.

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